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  spec no: dsad1078 rev no: v.2 date: mar/01/2005 page: 1 of 5 approved: j. lu checked: allen liu drawn: y.cheng er p: 1203002009 APTB1612ESGC high efficiency red super bright green description the high efficiency red source color devices are made with gallium arsenide phosphide on gallium phosphide orange light emitting diode. the super bright green source color devices are made with gallium phosphide green light emitting diode. package dimension s 1.6x1.25mm bi - color smd chip led lamp features  1.6mmx1.25mm smt led, 0.65mm thickness.  bi - color,low power consumption.  wide viewing angle.  ideal for backlight and indicator.  various colors and lens types available.  package : 2000pcs / reel. notes: 1. all dimensions are in millimeters (inches). 2. tolerance is 0.2(0.008 ") unless otherwise noted. 3. specifications are subject to change without notice .
spec no: dsad1078 rev no: v.2 date: mar/01/2005 page: 2 of 5 approved: j. lu checked: allen liu drawn: y.cheng er p: 1203002009 selection guid e note: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. part no. dice lens type iv (mcd) @ 20ma viewing angle min. typ. 2 ? 1/2 APTB1612ESGC high efficiency red (gaasp/gap) water clear 4 12 super bright green (gap) 4 12 120 electrical / optical characteristics at t a =25 c absolute maximum ratings at t a =25 c symbol parameter device typ. max. test conditions units peak peak wavelength high efficiency red super bright green 627 565 nm i f =20ma d dominant wavelength high efficiency red super bright green 625 568 nm i f =20ma ? 1/2 spectral line half - width high efficiency red super bright green 45 30 nm i f =20ma c capacitance high efficiency red super bright green 15 15 pf v f =0v;f=1mhz v f forward voltage high efficiency red super bright green 2.0 2.2 2.5 2.5 v i f =20ma i r reverse current all 10 ua v r = 5v parameter high efficiency red super bright green units power dissipation 105 105 mw dc forward current 30 25 ma peak forward current [1] 160 140 ma reverse voltage v operating / storage temperature - 40c to +85c 5 note: 1. 1/10 duty cycle, 0.1ms pulse width.
spec no: dsad1078 rev no: v.2 date: mar/01/2005 page: 3 of 5 approved: j. lu checked: allen liu drawn: y.cheng er p: 1203002009 APTB1612ESGC high efficiency red
spec no: dsad1078 rev no: v.2 date: mar/01/2005 page: 4 of 5 approved: j. lu checked: allen liu drawn: y.cheng er p: 1203002009 super bright green
spec no: dsad1078 rev no: v.2 date: mar/01/2005 page: 5 of 5 approved: j. lu checked: allen liu drawn: y.cheng er p: 1203002009 recommended soldering pattern (units : mm ) tape specifications (units : mm ) APTB1612ESGC smt reflow soldering instruction s number of reflow process shall be 2 times or less and cooling process to normal temperature is required between first and second soldering process .


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